NanoElectronics Laboratory

Interactive calculators, theory, formulas and simulations in nanoelectronics.

Semiconductor Devices

4

Shockley equation, depletion region, I-V characteristic. Si, Ge, GaAs, GaN, SiC.

Metal-Oxide-Semiconductor Field-Effect Transistor

Id-Vg, Id-Vd characteristics, threshold voltage, body effect.

Bipolar Junction Transistor

Ebers-Moll model, output characteristics, Gummel plot, current gain β.

Schottky Junction

Metal-semiconductor junction, Schottky barrier, I-V characteristic.

Circuits & Filters

3

RC / RLC Circuit

Transient response, Bode plot, resonance and quality factor.

Frequency Filters

Butterworth, Chebyshev, Bessel approximations. Low-pass, high-pass, band-pass filters. Bode plot.

Amplifier configurations, GBW, slew rate and large-signal distortion.

Nano Devices

3

Single-Electron Transistor

Coulomb blockade, charge quantization, tunnel junction. Animated.

Resonant Tunneling Diode

Quantum tunneling, negative differential resistance, I-V characteristic.

Fin and Gate-All-Around Transistors

Multi-gate architecture, natural length, short-channel effect suppression.

Physics & Noise

3

Carrier Concentration

Electron and hole concentration, Fermi level, temperature dependence.

Johnson, shot, 1/f noise. Signal-to-noise ratio (SNR).

RF / S-Parameters

S-parameters, Smith chart, impedance matching.

Topological Devices

1

Topological Transistor

Topological phase transition, edge states, spin-momentum locking. HgTe/CdTe, InAs/GaSb, Stanene, Na₃Bi, WTe₂.